Infineon Technologies IRF6665TR1

IRF6665TR1


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: IRF6665TR1
  • Package: DirectFET™ Isometric SH
  • Datasheet:
  • Stock: 50770000
  • Description: N-Channel 100 V 4.2A (Ta), 19A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SH
  • Price:

Quantity:

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Infineon Technologies
Series -
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 62mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ SH
Package / Case DirectFET™ Isometric SH
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
N-Channel 100 V 4.2A (Ta), 19A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SH

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