Toshiba Semiconductor and Storage TK2P60D(TE16L1,NQ)

TK2P60D(TE16L1,NQ)

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: TK2P60D(TE16L1,NQ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet:
Stock: 92960000
Description: N-Channel 600 V 2A (Ta) 60W (Tc) Surface Mount PW-MOLD
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SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	π-MOSVII
Package	Tape & Reel (TR)
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	7 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PW-MOLD
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	TK2P60
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,000