Toshiba Semiconductor and Storage TK40E10K3,S1X(S

TK40E10K3,S1X(S


  • Manufacturer: Toshiba Semiconductor and Storage
  • AIBOSI NO: TK40E10K3,S1X(S
  • Package: TO-220-3
  • Datasheet:
  • Stock: 41520000
  • Description: N-Channel 100 V 40A (Ta) Through Hole TO-220-3
  • Price:

Quantity:

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr Toshiba Semiconductor and Storage
Series U-MOSIV
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 40A (Ta)
Rds On (Max) @ Id, Vgs 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 10 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number TK40E10
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
N-Channel 100 V 40A (Ta) Through Hole TO-220-3

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