Toshiba Semiconductor and Storage TTC0002(Q)

TTC0002(Q)


  • Manufacturer: Toshiba Semiconductor and Storage
  • AIBOSI NO: TTC0002(Q)
  • Package: TO-3PL
  • Datasheet:
  • Stock: 57510000
  • Description: Bipolar (BJT) Transistor NPN 160 V 18 A 30MHz 180 W Through Hole TO-3P(L)
  • Price: $1.67

Quantity:

Unit Price: $1.6700

Ext Price: $1.6700

In Stock

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SPECIFICATIONS

Parameters
Mfr Toshiba Semiconductor and Storage
Series -
Package Bulk
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 18 A
Voltage - Collector Emitter Breakdown (Max) 160 V
Vce Saturation (Max) @ Ib, Ic 2V @ 900mA, 9A
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A, 5V
Power - Max 180 W
Frequency - Transition 30MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3PL
Supplier Device Package TO-3P(L)
Base Product Number TTC0002
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0075
Other Names TTC0002Q
Standard Package 100
Bipolar (BJT) Transistor NPN 160 V 18 A 30MHz 180 W Through Hole TO-3P(L)

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