Texas Instruments CSD25211W1015

CSD25211W1015


  • Manufacturer: Texas Instruments
  • AIBOSI NO: CSD25211W1015
  • Package: 6-UFBGA, DSBGA
  • Datasheet:
  • Stock: 3830000
  • Description: P-Channel 20 V 3.2A (Ta) 1W (Ta) Surface Mount 6-DSBGA (1x1.5)
  • Price: $0.33

Quantity:

Unit Price: $0.3300

Ext Price: $0.3300

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SPECIFICATIONS

Parameters
Mfr Texas Instruments
Series NexFET™
Package Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 33mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.1 nC @ 4.5 V
Vgs (Max) -6V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-DSBGA (1x1.5)
Package / Case 6-UFBGA, DSBGA
Base Product Number CSD25211
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
P-Channel 20 V 3.2A (Ta) 1W (Ta) Surface Mount 6-DSBGA (1x1.5)

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In Stock

Please send RFQ , we will respond immediately.