Microsemi Corporation APT47N65BC3G

APT47N65BC3G


  • Manufacturer: Microsemi Corporation
  • AIBOSI NO: APT47N65BC3G
  • Package: TO-247-3
  • Datasheet:
  • Stock: 35030000
  • Description: N-Channel 650 V 47A (Tc) 417W (Tc) Through Hole TO-247 [B]
  • Price:

Quantity:

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr Microsemi Corporation
Series CoolMOS™
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7015 pF @ 25 V
FET Feature -
Power Dissipation (Max) 417W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 [B]
Package / Case TO-247-3
Base Product Number APT47N65
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1
N-Channel 650 V 47A (Tc) 417W (Tc) Through Hole TO-247 [B]

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In Stock

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