Toshiba Semiconductor and Storage TK65E10N1,S1X

TK65E10N1,S1X

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: TK65E10N1,S1X
Package: TO-220-3
Datasheet:
Stock: 32350000
Description: N-Channel 100 V 148A (Ta) 192W (Tc) Through Hole TO-220
Price: $1.46

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Unit Price: $1.4600

Ext Price: $1.4600

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	148A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	81 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5400 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	192W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Base Product Number	TK65E10
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50