Toshiba Semiconductor and Storage TK42E12N1,S1X

TK42E12N1,S1X

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: TK42E12N1,S1X
Package: TO-220-3
Datasheet:
Stock: 61090000
Description: N-Channel 120 V 88A (Tc) 140W (Tc) Through Hole TO-220
Price: $0.69

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Unit Price: $0.6850

Ext Price: $0.6850

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120 V
Current - Continuous Drain (Id) @ 25°C	88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9.4mOhm @ 21A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3100 pF @ 60 V
FET Feature	-
Power Dissipation (Max)	140W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Base Product Number	TK42E12
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	TK42E12N1S1X
Standard Package	50