Nexperia USA Inc. PDTA115EMB,315

PDTA115EMB,315


  • Manufacturer: Nexperia USA Inc.
  • AIBOSI NO: PDTA115EMB,315
  • Package: 3-XFDFN
  • Datasheet:
  • Stock: 62740000
  • Description: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 20 mA 180 MHz 250 mW Surface Mount DFN1006B-3
  • Price: $0.02

Quantity:

Unit Price: $0.0181

Ext Price: $0.0181

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SPECIFICATIONS

Parameters
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q100
Package Tape & Reel (TR)
Product Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 20 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 100 kOhms
Resistor - Emitter Base (R2) 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA
Frequency - Transition 180 MHz
Power - Max 250 mW
Mounting Type Surface Mount
Package / Case 3-XFDFN
Supplier Device Package DFN1006B-3
Base Product Number PDTA115
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 10,000
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 20 mA 180 MHz 250 mW Surface Mount DFN1006B-3

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