Toshiba Semiconductor and Storage RN2303(TE85L,F)

RN2303(TE85L,F)

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: RN2303(TE85L,F)
Package: SC-70, SOT-323
Datasheet:
Stock: 3670000
Description: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70
Price: $0.14

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Unit Price: $0.1350

Ext Price: $0.1350

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SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Cut Tape (CT)
Product Status	Active
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	200 MHz
Power - Max	100 mW
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	SC-70
Base Product Number	RN2303
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0075
Standard Package	3,000