Toshiba Semiconductor and Storage SSM3K309T(TE85L,F)

SSM3K309T(TE85L,F)

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: SSM3K309T(TE85L,F)
Package: TO-236-3, SC-59, SOT-23-3
Datasheet:
Stock: 31270000
Description: N-Channel 20 V 4.7A (Ta) 700mW (Ta) Surface Mount TSM
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SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4V
Rds On (Max) @ Id, Vgs	31mOhm @ 4A, 4V
Vgs(th) (Max) @ Id	-
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1020 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TSM
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	SSM3K309
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	3,000