Microsemi Corporation JAN2N6790

JAN2N6790


  • Manufacturer: Microsemi Corporation
  • AIBOSI NO: JAN2N6790
  • Package: TO-205AF Metal Can
  • Datasheet:
  • Stock: 69160000
  • Description: N-Channel 200 V 3.5A (Tc) 800mW (Tc) Through Hole TO-39
  • Price:

Quantity:

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Microsemi Corporation
Series Military, MIL-PRF-19500/555
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.3 nC @ 10 V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 800mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-39
Package / Case TO-205AF Metal Can
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 1
N-Channel 200 V 3.5A (Tc) 800mW (Tc) Through Hole TO-39

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In Stock

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