Toshiba Semiconductor and Storage RN1103ACT(TPL3)

RN1103ACT(TPL3)


  • Manufacturer: Toshiba Semiconductor and Storage
  • AIBOSI NO: RN1103ACT(TPL3)
  • Package: SC-101, SOT-883
  • Datasheet:
  • Stock: 14380000
  • Description: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 80 mA 100 mW Surface Mount CST3
  • Price:

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SPECIFICATIONS

Parameters
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Power - Max 100 mW
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Supplier Device Package CST3
Base Product Number RN1103
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 10,000
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Product Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 80 mA
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 80 mA 100 mW Surface Mount CST3

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