Toshiba Semiconductor and Storage RN2110ACT(TPL3)

RN2110ACT(TPL3)

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: RN2110ACT(TPL3)
Package: SC-101, SOT-883
Datasheet:
Stock: 100000
Description: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 80 mA 100 mW Surface Mount CST3
Price: $0.03

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Unit Price: $0.0264

Ext Price: $0.0264

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SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
Product Status	Active
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	80 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Power - Max	100 mW
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Supplier Device Package	CST3
Base Product Number	RN2110
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	10,000