Toshiba Semiconductor and Storage TK11A65W,S5X

TK11A65W,S5X


  • Manufacturer: Toshiba Semiconductor and Storage
  • AIBOSI NO: TK11A65W,S5X
  • Package: TO-220-3 Full Pack
  • Datasheet:
  • Stock: 1010000
  • Description: N-Channel 650 V 11.1A (Ta) 35W (Tc) Through Hole TO-220SIS
  • Price: $0.77

Quantity:

Unit Price: $0.7650

Ext Price: $0.7650

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SPECIFICATIONS

Parameters
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 390mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 450µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 300 V
FET Feature -
Power Dissipation (Max) 35W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Base Product Number TK11A65
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
N-Channel 650 V 11.1A (Ta) 35W (Tc) Through Hole TO-220SIS

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