Toshiba Semiconductor and Storage TPN13008NH,L1Q

TPN13008NH,L1Q


  • Manufacturer: Toshiba Semiconductor and Storage
  • AIBOSI NO: TPN13008NH,L1Q
  • Package: 8-PowerVDFN
  • Datasheet:
  • Stock: 6560000
  • Description: N-Channel 80 V 18A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
  • Price: $0.53

Quantity:

Unit Price: $0.5300

Ext Price: $0.5300

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SPECIFICATIONS

Parameters
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13.3mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 40 V
FET Feature -
Power Dissipation (Max) 700mW (Ta), 42W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.1x3.1)
Package / Case 8-PowerVDFN
Base Product Number TPN13008
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 5,000
N-Channel 80 V 18A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)

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