Rohm Semiconductor R6047ENZ1C9

R6047ENZ1C9


  • Manufacturer: Rohm Semiconductor
  • AIBOSI NO: R6047ENZ1C9
  • Package: TO-247-3
  • Datasheet:
  • Stock: 92270000
  • Description: N-Channel 600 V 47A (Tc) 120W (Tc) Through Hole TO-247
  • Price:

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SPECIFICATIONS

Parameters
Mfr Rohm Semiconductor
Series -
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 25.8A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3850 pF @ 25 V
FET Feature -
Power Dissipation (Max) 120W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 450
N-Channel 600 V 47A (Tc) 120W (Tc) Through Hole TO-247

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