Diodes Incorporated DMT10H015LSS-13

DMT10H015LSS-13


  • Manufacturer: Diodes Incorporated
  • AIBOSI NO: DMT10H015LSS-13
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Datasheet:
  • Stock: 43980000
  • Description: N-Channel 100 V 8.3A (Ta) 1.2W (Ta) Surface Mount 8-SO
  • Price: $0.54

Quantity:

Unit Price: $0.5350

Ext Price: $0.5350

In Stock

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr Diodes Incorporated
Series -
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1871 pF @ 50 V
FET Feature -
Power Dissipation (Max) 1.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number DMT10
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
N-Channel 100 V 8.3A (Ta) 1.2W (Ta) Surface Mount 8-SO

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