Infineon Technologies IPP12CN10NGXKSA1

IPP12CN10NGXKSA1


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: IPP12CN10NGXKSA1
  • Package: TO-220-3
  • Datasheet:
  • Stock: 42140000
  • Description: N-Channel 100 V 67A (Tc) 125W (Tc) Through Hole PG-TO220-3
  • Price:

Quantity:

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12.9mOhm @ 67A, 10V
Vgs(th) (Max) @ Id 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4320 pF @ 50 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP12C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP000680866
Standard Package 500
N-Channel 100 V 67A (Tc) 125W (Tc) Through Hole PG-TO220-3

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