Vishay Siliconix SIHG28N65EF-GE3

SIHG28N65EF-GE3


  • Manufacturer: Vishay Siliconix
  • AIBOSI NO: SIHG28N65EF-GE3
  • Package: TO-247-3
  • Datasheet:
  • Stock: 67520000
  • Description: N-Channel 650 V 28A (Tc) 250W (Tc) Through Hole TO-247AC
  • Price: $2.17

Quantity:

Unit Price: $2.1718

Ext Price: $2.1718

In Stock

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 117mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 146 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3249 pF @ 100 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number SIHG28
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 25
Mfr Vishay Siliconix
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
N-Channel 650 V 28A (Tc) 250W (Tc) Through Hole TO-247AC

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