Toshiba Semiconductor and Storage TK4R3A06PL,S4X

TK4R3A06PL,S4X

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: TK4R3A06PL,S4X
Package: TO-220-3 Full Pack
Datasheet:
Stock: 20000
Description: N-Channel 60 V 68A (Tc) 36W (Tc) Through Hole TO-220SIS
Price: $0.67

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Unit Price: $0.6650

Ext Price: $0.6650

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.2mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id	2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	48.2 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3280 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	36W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TK4R3A06
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	Not Applicable
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50