Rohm Semiconductor DTD114ESTP

DTD114ESTP


  • Manufacturer: Rohm Semiconductor
  • AIBOSI NO: DTD114ESTP
  • Package: SC-72 Formed Leads
  • Datasheet:
  • Stock: 55290000
  • Description: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 200 MHz 300 mW Through Hole SPT
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
Mfr Rohm Semiconductor
Series -
Package Tape & Box (TB)
Product Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 200 MHz
Power - Max 300 mW
Mounting Type Through Hole
Package / Case SC-72 Formed Leads
Supplier Device Package SPT
Base Product Number DTD114
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 5,000
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 200 MHz 300 mW Through Hole SPT

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