Toshiba Semiconductor and Storage 2SC2235-Y,T6KEHF(M

2SC2235-Y,T6KEHF(M

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: 2SC2235-Y,T6KEHF(M
Package: TO-226-3, TO-92-3 Long Body
Datasheet:
Stock: 50110000
Description: Bipolar (BJT) Transistor NPN 120 V 800 mA 120MHz 900 mW Through Hole TO-92MOD
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SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Bulk
Product Status	Obsolete
Transistor Type	NPN
Current - Collector (Ic) (Max)	800 mA
Voltage - Collector Emitter Breakdown (Max)	120 V
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 100mA, 5V
Power - Max	900 mW
Frequency - Transition	120MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 Long Body
Supplier Device Package	TO-92MOD
Base Product Number	2SC2235
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0075
Standard Package	1