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Toshiba Semiconductor and Storage 2SD2257,Q(J
2SD2257,Q(J
- Manufacturer: Toshiba Semiconductor and Storage
- AIBOSI NO: 2SD2257,Q(J
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 22480000
- Description: Bipolar (BJT) Transistor NPN 100 V 3 A 2 W Through Hole TO-220NIS
- Price:
In Stock
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Shipping Cost
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| Parameters | |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.5mA, 1.5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 2A, 2V |
| Power - Max | 2 W |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220NIS |
| Base Product Number | 2SD2257 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 1 |
Bipolar (BJT) Transistor NPN 100 V 3 A 2 W Through Hole TO-220NIS
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