Microsemi Corporation JAN2N5014S

JAN2N5014S


  • Manufacturer: Microsemi Corporation
  • AIBOSI NO: JAN2N5014S
  • Package: TO-205AD, TO-39-3 Metal Can
  • Datasheet: -
  • Stock: 25460000
  • Description: Bipolar (BJT) Transistor NPN 900 V 200 mA 1 W Through Hole TO-39 (TO-205AD)
  • Price:

Quantity:

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Microsemi Corporation
Series Military, MIL-PRF-19500/727
Package Bulk
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 200 mA
Voltage - Collector Emitter Breakdown (Max) 900 V
Current - Collector Cutoff (Max) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 10V
Power - Max 1 W
Frequency - Transition -
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39 (TO-205AD)
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) Not Applicable
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1
Bipolar (BJT) Transistor NPN 900 V 200 mA 1 W Through Hole TO-39 (TO-205AD)

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In Stock

Please send RFQ , we will respond immediately.