Infineon Technologies IPB60R099P7ATMA1

IPB60R099P7ATMA1


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: IPB60R099P7ATMA1
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Datasheet:
  • Stock: 79010000
  • Description: N-Channel 600 V 31A (Tc) 117W (Tc) Surface Mount PG-TO263-3
  • Price: $2.53

Quantity:

Unit Price: $2.5250

Ext Price: $2.5250

In Stock

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 4V @ 530µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1952 pF @ 400 V
FET Feature -
Power Dissipation (Max) 117W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB60R099
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
N-Channel 600 V 31A (Tc) 117W (Tc) Surface Mount PG-TO263-3

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