Toshiba Semiconductor and Storage RN2114MFV,L3F

RN2114MFV,L3F

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: RN2114MFV,L3F
Package: SOT-723
Datasheet:
Stock: 97400000
Description: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Price: $0.10

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Unit Price: $0.1000

Ext Price: $0.1000

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SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
Product Status	Active
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	1 kOhms
Resistor - Emitter Base (R2)	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)	500nA
Power - Max	150 mW
Mounting Type	Surface Mount
Package / Case	SOT-723
Supplier Device Package	VESM
Base Product Number	RN2114
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	8,000