Infineon Technologies IRFB23N20DPBF

IRFB23N20DPBF


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: IRFB23N20DPBF
  • Package: TO-220-3
  • Datasheet:
  • Stock: 80280000
  • Description: N-Channel 200 V 24A (Tc) 3.8W (Ta), 170W (Tc) Through Hole TO-220AB
  • Price:

Quantity:

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
N-Channel 200 V 24A (Tc) 3.8W (Ta), 170W (Tc) Through Hole TO-220AB

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