Toshiba Semiconductor and Storage ULN2803APG,CN

ULN2803APG,CN

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: ULN2803APG,CN
Package: 18-DIP (0.300", 7.62mm)
Datasheet:
Stock: 67050000
Description: Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 1.47W Through Hole 18-DIP
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SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Obsolete
Transistor Type	8 NPN Darlington
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 350mA, 2V
Power - Max	1.47W
Frequency - Transition	-
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Through Hole
Package / Case	18-DIP (0.300", 7.62mm)
Supplier Device Package	18-DIP
Base Product Number	ULN2803
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0075
Standard Package	800