Toshiba Semiconductor and Storage ULN2004APG,C,N

ULN2004APG,C,N

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: ULN2004APG,C,N
Package: 16-DIP (0.300", 7.62mm)
Datasheet: -
Stock: 51280000
Description: Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA 1.47W Through Hole 16-DIP
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SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Obsolete
Transistor Type	7 NPN Darlington
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max)	50µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 350mA, 2V
Power - Max	1.47W
Frequency - Transition	-
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Through Hole
Package / Case	16-DIP (0.300", 7.62mm)
Supplier Device Package	16-DIP
Base Product Number	ULN2004
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0075
Standard Package	25