Toshiba Semiconductor and Storage 2SA1162-GR,LF

2SA1162-GR,LF


  • Manufacturer: Toshiba Semiconductor and Storage
  • AIBOSI NO: 2SA1162-GR,LF
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet:
  • Stock: 620000
  • Description: Bipolar (BJT) Transistor PNP 50 V 150 mA 80MHz 150 mW Surface Mount S-Mini
  • Price: $0.09

Quantity:

Unit Price: $0.0900

Ext Price: $0.0900

In Stock

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SPECIFICATIONS

Parameters
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 150 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Power - Max 150 mW
Frequency - Transition 80MHz
Operating Temperature 125°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package S-Mini
Base Product Number 2SA1162
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 3,000
Bipolar (BJT) Transistor PNP 50 V 150 mA 80MHz 150 mW Surface Mount S-Mini

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