onsemi 2N3416_D27Z

2N3416_D27Z


  • Manufacturer: onsemi
  • AIBOSI NO: 2N3416_D27Z
  • Package: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Datasheet:
  • Stock: 24960000
  • Description: Bipolar (BJT) Transistor NPN 50 V 500 mA 625 mW Through Hole TO-92-3
  • Price:

Quantity:

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr onsemi
Series -
Package Tape & Reel (TR)
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 3mA, 50mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 2mA, 4.5V
Power - Max 625 mW
Frequency - Transition -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3
Base Product Number 2N341
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 2,000
Bipolar (BJT) Transistor NPN 50 V 500 mA 625 mW Through Hole TO-92-3

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In Stock

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