si2312cds t1 ge3

Introducing the Si2312CDS-T1-GE3, a high-performance power MOSFET from Vishay Semiconductor. This product is designed to deliver efficient and reliable power management in a wide range of applications including battery management, power supplies, and motor controls. The Si2312CDS-T1-GE3 features a low on-state resistance, high current carrying capability, and a compact form factor, making it an ideal choice for space-constrained designs. With a voltage rating of 20V and a maximum continuous drain current of 3.2A, this MOSFET offers excellent performance and reliability in demanding environments. Its low gate charge and fast switching characteristics also contribute to improved efficiency and reduced power losses. Additionally, the Si2312CDS-T1-GE3 is RoHS-compliant, ensuring environmental sustainability in manufacturing and use. Trust Vishay Semiconductor for cutting-edge power management solutions, and unleash the full potential of your designs with the Si2312CDS-T1-GE3.