PN Junction Semiconductor P3M12160K4

P3M12160K4


  • Manufacturer: PN Junction Semiconductor
  • AIBOSI NO: P3M12160K4
  • Package: TO-247-4
  • Datasheet:
  • Stock: 54390000
  • Description: N-Channel 1200 V 19A 110W Through Hole TO-247-4L
  • Price: $4.42

Quantity:

Unit Price: $4.4150

Ext Price: $4.4150

In Stock

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr PN Junction Semiconductor
Series P3M
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 19A
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 192mOhm @ 10A, 15V
Vgs(th) (Max) @ Id 2.4V @ 2.5mA (Typ)
Vgs (Max) +21V, -8V
FET Feature -
Power Dissipation (Max) 110W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
RoHS Status ROHS3 Compliant
REACH Status REACH Affected
Other Names 4237-P3M12160K4
Standard Package 1
N-Channel 1200 V 19A 110W Through Hole TO-247-4L

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