Goford Semiconductor G1K3N10G

G1K3N10G


  • Manufacturer: Goford Semiconductor
  • AIBOSI NO: G1K3N10G
  • Package: TO-243AA
  • Datasheet:
  • Stock: 30000
  • Description: N-Channel 100 V 5A (Tc) 1.5W (Tc) Surface Mount SOT-89
  • Price: $0.05

Quantity:

Unit Price: $0.0495

Ext Price: $0.0495

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Rds On (Max) @ Id, Vgs 130mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 644 pF @ 50 V
FET Feature -
Power Dissipation (Max) 1.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-89
Package / Case TO-243AA
RoHS Status RoHS Compliant
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0000
Standard Package 1,000
Mfr Goford Semiconductor
Series -
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
N-Channel 100 V 5A (Tc) 1.5W (Tc) Surface Mount SOT-89

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