Vishay General Semiconductor - Diodes Division 10ETF12

10ETF12


  • Manufacturer: Vishay General Semiconductor - Diodes Division
  • AIBOSI NO: 10ETF12
  • Package: TO-220-2
  • Datasheet:
  • Stock: 23720000
  • Description: Diode 1200 V 10A Through Hole TO-220AC
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
Mfr Vishay General Semiconductor - Diodes Division
Series -
Package Tube
Product Status Obsolete
Technology Standard
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 1.33 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 310 ns
Current - Reverse Leakage @ Vr 100 µA @ 1200 V
Capacitance @ Vr, F -
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220AC
Operating Temperature - Junction -40°C ~ 150°C
Base Product Number 10ETF12
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Standard Package 1,000
Diode 1200 V 10A Through Hole TO-220AC

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