onsemi FQA10N60C

FQA10N60C


  • Manufacturer: onsemi
  • AIBOSI NO: FQA10N60C
  • Package: TO-3P-3, SC-65-3
  • Datasheet:
  • Stock: 85660000
  • Description: N-Channel 600 V 10A (Tc) 192W (Tc) Through Hole TO-3P
  • Price:

Quantity:

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Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
Base Product Number FQA1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Mfr onsemi
Series QFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 730mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2040 pF @ 25 V
FET Feature -
Power Dissipation (Max) 192W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
N-Channel 600 V 10A (Tc) 192W (Tc) Through Hole TO-3P

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