NXP USA Inc. PHD16N03LT,118

PHD16N03LT,118


  • Manufacturer: NXP USA Inc.
  • AIBOSI NO: PHD16N03LT,118
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet:
  • Stock: 42050000
  • Description: N-Channel 30 V 16A (Tc) 32.6W (Tc) Surface Mount DPAK
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
Mfr NXP USA Inc.
Series TrenchMOS™
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 67mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 10 V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 210 pF @ 30 V
FET Feature -
Power Dissipation (Max) 32.6W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number PHD16
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
N-Channel 30 V 16A (Tc) 32.6W (Tc) Surface Mount DPAK

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