NXP USA Inc. PHM30NQ10T,518

PHM30NQ10T,518


  • Manufacturer: NXP USA Inc.
  • AIBOSI NO: PHM30NQ10T,518
  • Package: 8-VDFN Exposed Pad
  • Datasheet:
  • Stock: 52090000
  • Description: N-Channel 100 V 37.6A (Tc) 62.5W (Tc) Surface Mount 8-HVSON (5x6)
  • Price:

Quantity:

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr NXP USA Inc.
Series TrenchMOS™
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 37.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 53.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 25 V
FET Feature -
Power Dissipation (Max) 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HVSON (5x6)
Package / Case 8-VDFN Exposed Pad
Base Product Number PHM30
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
N-Channel 100 V 37.6A (Tc) 62.5W (Tc) Surface Mount 8-HVSON (5x6)

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