Toshiba Semiconductor and Storage TTA006B,Q

TTA006B,Q

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: TTA006B,Q
Package: TO-225AA, TO-126-3
Datasheet:
Stock: 1030000
Description: Bipolar (BJT) Transistor PNP 230 V 1 A 70MHz 1.5 W Through Hole TO-126N
Price: $0.31

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Unit Price: $0.3100

Ext Price: $0.3100

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SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tray
Product Status	Active
Transistor Type	PNP
Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	230 V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max)	200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 5V
Power - Max	1.5 W
Frequency - Transition	70MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
Supplier Device Package	TO-126N
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	264-TTA006BQ
Standard Package	250