Goford Semiconductor GT100N12K

GT100N12K


  • Manufacturer: Goford Semiconductor
  • AIBOSI NO: GT100N12K
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet:
  • Stock: 20000
  • Description: N-Channel 120 V 65A (Tc) 75W (Tc) Surface Mount TO-252
  • Price: $0.84

Quantity:

Unit Price: $0.8350

Ext Price: $0.8350

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SPECIFICATIONS

Parameters
Mfr Goford Semiconductor
Series -
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2911 pF @ 60 V
FET Feature -
Power Dissipation (Max) 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0000
Standard Package 2,500
N-Channel 120 V 65A (Tc) 75W (Tc) Surface Mount TO-252

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In Stock

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