Goford Semiconductor G65P06T

G65P06T


  • Manufacturer: Goford Semiconductor
  • AIBOSI NO: G65P06T
  • Package: TO-220-3
  • Datasheet:
  • Stock: 100000
  • Description: P-Channel 60 V 65A (Tc) 130W (Tc) Through Hole TO-220
  • Price: $0.23

Quantity:

Unit Price: $0.2265

Ext Price: $0.2265

In Stock

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Goford Semiconductor
Series -
Package Tube
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5814 pF @ 25 V
FET Feature -
Power Dissipation (Max) 130W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
P-Channel 60 V 65A (Tc) 130W (Tc) Through Hole TO-220

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In Stock

Please send RFQ , we will respond immediately.