Goford Semiconductor G30N04D3

G30N04D3


  • Manufacturer: Goford Semiconductor
  • AIBOSI NO: G30N04D3
  • Package: 8-PowerVDFN
  • Datasheet:
  • Stock: 100000
  • Description: N-Channel 30A (Tc) 19.8W (Tc) Surface Mount 8-DFN (3.15x3.05)
  • Price: $0.08

Quantity:

Unit Price: $0.0760

Ext Price: $0.0760

In Stock

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1780 pF @ 20 V
FET Feature Standard
Power Dissipation (Max) 19.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-DFN (3.15x3.05)
Package / Case 8-PowerVDFN
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0000
Other Names 4822-G30N04D3TR
Standard Package 5,000
Mfr Goford Semiconductor
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Active
N-Channel 30A (Tc) 19.8W (Tc) Surface Mount 8-DFN (3.15x3.05)

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