Infineon Technologies IRF3711LPBF

IRF3711LPBF


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: IRF3711LPBF
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Datasheet:
  • Stock: 46440000
  • Description: N-Channel 20 V 110A (Tc) 3.1W (Ta), 120W (Tc) Through Hole TO-262
  • Price:

Quantity:

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2980 pF @ 10 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 120W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names *IRF3711LPBF
Standard Package 50
N-Channel 20 V 110A (Tc) 3.1W (Ta), 120W (Tc) Through Hole TO-262

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