onsemi HGTP12N60A4D

HGTP12N60A4D


  • Manufacturer: onsemi
  • AIBOSI NO: HGTP12N60A4D
  • Package: TO-220-3
  • Datasheet:
  • Stock: 60920000
  • Description: IGBT 600 V 54 A 167 W Through Hole TO-220-3
  • Price:

Quantity:

In Stock

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IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr onsemi
Series -
Package Tube
Product Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 54 A
Current - Collector Pulsed (Icm) 96 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Power - Max 167 W
Switching Energy 55µJ (on), 50µJ (off)
Input Type Standard
Gate Charge 78 nC
Td (on/off) @ 25°C 17ns/96ns
Test Condition 390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr) 30 ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Base Product Number HGTP12N60
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 800
IGBT 600 V 54 A 167 W Through Hole TO-220-3

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