Infineon Technologies IRF520NSTRR

IRF520NSTRR


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: IRF520NSTRR
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Datasheet:
  • Stock: 45820000
  • Description: N-Channel 100 V 9.7A (Tc) 3.8W (Ta), 48W (Tc) Surface Mount D2PAK
  • Price:

Quantity:

In Stock

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Our sales will reply to your request by email within 24 hours.

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names =94-4024
Standard Package 800
Mfr Infineon Technologies
Series HEXFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 48W (Tc)
N-Channel 100 V 9.7A (Tc) 3.8W (Ta), 48W (Tc) Surface Mount D2PAK

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In Stock

Please send RFQ , we will respond immediately.