Diodes Incorporated 2N5551

2N5551


  • Manufacturer: Diodes Incorporated
  • AIBOSI NO: 2N5551
  • Package: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Datasheet: -
  • Stock: 34390000
  • Description: Bipolar (BJT) Transistor NPN 160 V 200 mA 300MHz 625 mW Through Hole TO-92
  • Price:

Quantity:

In Stock

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Diodes Incorporated
Series -
Package Tape & Reel (TR)
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 200 mA
Voltage - Collector Emitter Breakdown (Max) 160 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Power - Max 625 mW
Frequency - Transition 300MHz
Operating Temperature -
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92
Base Product Number 2N5551
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 2,000
Bipolar (BJT) Transistor NPN 160 V 200 mA 300MHz 625 mW Through Hole TO-92

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