Toshiba Semiconductor and Storage 2SA1721RTE85LF

2SA1721RTE85LF


  • Manufacturer: Toshiba Semiconductor and Storage
  • AIBOSI NO: 2SA1721RTE85LF
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet:
  • Stock: 48980000
  • Description: Bipolar (BJT) Transistor PNP 300 V 100 mA 50MHz 150 mW Surface Mount S-Mini
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 300 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 10V
Power - Max 150 mW
Frequency - Transition 50MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package S-Mini
Base Product Number 2SA1721
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 3,000
Bipolar (BJT) Transistor PNP 300 V 100 mA 50MHz 150 mW Surface Mount S-Mini

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