Infineon Technologies IPP039N10N5XKSA1

IPP039N10N5XKSA1


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: IPP039N10N5XKSA1
  • Package: TO-220-3
  • Datasheet: -
  • Stock: 38320000
  • Description: N-Channel 100 V 100A (Tc) 188W (Tc) Through Hole PG-TO220-3
  • Price:

Quantity:

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Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 125µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7000 pF @ 50 V
FET Feature -
Power Dissipation (Max) 188W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
ECCN EAR99
HTSUS 8541.29.0095
Other Names 448-IPP039N10N5XKSA1
Standard Package 1
N-Channel 100 V 100A (Tc) 188W (Tc) Through Hole PG-TO220-3

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In Stock

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