onsemi FQA6N80

FQA6N80


  • Manufacturer: onsemi
  • AIBOSI NO: FQA6N80
  • Package: TO-3P-3, SC-65-3
  • Datasheet:
  • Stock: 88180000
  • Description: N-Channel 800 V 6.3A (Tc) 185W (Tc) Through Hole TO-3P
  • Price:

Quantity:

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr onsemi
Series QFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.95Ohm @ 3.15A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V
FET Feature -
Power Dissipation (Max) 185W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
Base Product Number FQA6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
N-Channel 800 V 6.3A (Tc) 185W (Tc) Through Hole TO-3P

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